Datasheet > 2N7002KW

2N7002KW

更新时间： 2023-12-06 20:07:59

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	970K
描述
SOT-323

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数据手册

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2N7002KW 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate MOSFETS

2N7002KW

N-Channel MOSFET

I_D

V_(BR)DSS

R_DS(on)MAX

SOT-323

ꢝ

ꢜ

ꢞꢚꢛꢀ

ꢀ2.5

ꢛ

ꢙꢚ

ꢟꢠꢚꢡ

ꢢ

ꢝ

ꢟꢜ ꢠꢣꢤꢛꢀ

ꢀ

1. GATE

2. SOURCE

3. DRAIN

FEATURE

APPLICATION

ꢀ

ꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢆꢇꢁꢈꢅꢉꢊꢋꢂꢌꢍꢅꢎꢇꢏꢅꢐꢇꢏꢂꢁꢑꢒꢃꢅꢓꢃꢔꢋꢌꢃꢕ

z High density cell design for Low R_DS(on)

z Voltage controlled small signal switch

z Rugged and reliable

ꢀ

ꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢓꢖꢗꢓꢖꢅꢖꢇꢘꢔꢃꢏꢂꢃꢏꢅꢅꢅ

z High saturation current capability

z ESD protected

Equivalent Circuit

Mꢀꢁꢂꢃꢄꢅ

72K= Device code

Solid dot = Green molding compound device.

72K

MOSFET MAXIMUM RATINGS (T_a=25Я unless otherwise noted)

Symbol

V_DS

Parameter

Drain-Source Voltage

Value

Unit

V_ꢀS

ꢀꢁꢂꢃ-Source Voltage

±ꢄ0

340

800

0.2

I_D

Continuous Drain Current

I_DM

Pulsed Drain Current(note1)

Power Dissipation

P_D

T_J,T_stg

Operation Junction and Storage Temperature Range

-55~+150

625

R_șJA

Thermal Resistance from Junction to Ambient

Я/W

www.jscj-elec.com

Rev. - 2.1

12 3 4 5

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