Datasheet > 2N7002KW

2N7002KW

更新时间： 2024-01-15 15:32:59

品牌	Logo	应用领域
安森美 - ONSEMI		PC 开关光电二极管晶体管场效应晶体管
页数	文件大小	规格书
6页	259K
描述
N沟道增强模型场效应晶体管

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2N7002KW 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.46

2N7002KW 数据手册

2N7002KW

N-Channel Enhancement

Mode Field Effect

Transistor

Features

www.onsemi.com

• Low On−Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra−Small Surface Mount Package

• These Devices are Pb−Free and are RoHS Compliant

• ESD HBM = 1000 V as per JESD22 A114 and ESD CDM = 1500 V

as per JESD22 C101

SC−70

3 LEAD

CASE 419AB

MARKING DIAGRAM

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain−Source Voltage

Symbol

Value

Unit

7KW

DSS

GSS

Gate−Source Voltage

7KW = Specific Device Marking

Maximum Drain Current

Continuous

310

195

1.2

T = 100°C

Pulsed

Operating Junction Temperature Range

Storage Temperature Range

−55 to

+150

°C

−55 to

+150

°C

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Parameter

Symbol

Value

Unit

ORDERING INFORMATION^†

Total Device Dissipation

300

2.4

Derating above T = 25°C

mW/°C

†

Device

2N7002KW

Package

Shipping

Thermal Resistance,

Junction to Ambient*

410

°C/W

SC−70

3000 / Tape &

Reel

*Device mounted on FR−4 PCB, 1″ x 0.85″ x 0.062″. Minimum land pad size

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

May, 2018 − Rev. 1

2N7002KW/D

12 3 4 5 6

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