Datasheet > 2N7002KW

2N7002KW

更新时间： 2024-02-09 12:20:57

品牌	Logo	应用领域
安森美 - ONSEMI		PC 开关光电二极管晶体管场效应晶体管
页数	文件大小	规格书
6页	259K
描述
N沟道增强模型场效应晶体管

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技术参数
数据手册

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2N7002KW 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.46

2N7002KW 数据手册

2N7002KW

TYPICAL PERFORMANCE CHARACTERISTICS

10000

1.100

1.075

1.050

1.025

1.000

0.975

0.950

0.925

V_GS= 0 V

I_D=250uA

1000

100

T_A=125^oC

T_A=25^oC

T_A=−55^oC

0.1

−25

100

125

0.0

0.2

0.4

0.6

0.8

1.0

1.2

T_J, Junction Temperatture( ^oC)

. Body Diode Forward Voltage [V]

Figure 7. Breakdown Voltage Variation with

Temperature

Figure 8. Body Diode Forward Voltage

Variation with Source Current and

Temperature

100

_DS= 25V

ISS

I_D= 500mA

C_OSS

C_RSS

I_D= 115mA

0.2

f = 1MHZ

I_D= 280mA

_GS= 0V

100

0.0

0.4

0.6

0.8

1.0

V_DS. Drain to Source Voltage (V)

Qg. Gate Charge (nC)

Figure 9. Capacitance Variation

Figure 10. Gate Charge Characteristics

10⁰

10⁻¹

10⁻²

10⁻³

10⁻⁴

100ms

50%

20%

1ms

10ms

100ms

Rthja(t)=r(t)*Rthja

Rthja=410 ^oC/W

R_DS(on)Limit

0.1

10%

Vgs=10V

Single Pulse

Rthja=410^oC/W

D=1%

T = 25^oC

Single Pulse

0.01

10⁻¹

10⁰

10¹

10²

1E−4

1E−3

0.01

0.1

100

1000

t1, time(sec)

V_DS, Drain−Source Voltage [V]

Figure 11. Maximum Safe Operating Area

Figure 12. Transient Thermal Response Curve

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