Datasheet > 2N7002KU

2N7002KU

更新时间： 2024-11-21 12:53:07

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
4页	370K
描述
N Channel MOSFET

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中文翻译

获取价格

数据手册

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2N7002KU 数据手册

SEMICONDUCTOR

2N7002KU

TECHNICAL DATA

N Channel MOSFET

INTERFACE AND SWITCHING APPLICATION.

FEATURES

· ESD Protected 2000V.(Human Body Model)

DIM MILLIMETERS

· High density cell design for low R_DS(ON)

2.00 0.20

1.25+0.15

· Voltage controlled small signal switch.

0.90 0.10

0.3+0.10/-0.05

2.10 0.20

0.65

0.15+0.1/-0.06

1.30

0.00~0.10

0.70

0.42

0.10 MIN

1. SOURCE

2. GATE

3. DRAIN

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

USM

SYMBOL RATING UNIT

V_DSS

V_GSS

I_D

Drain-Source Voltage

±20

300

Gate-Source Voltage

Continuous

Drain Current

Pulsed ^{(Note 1)}

I_DP

1000

270

Drain Power Dissipation ^{(Note 2)}

Junction Temperature

P_D

℃

T_j

150

T_stg

R_thJA

Storage Temperature Range

-55∼ 150

460

℃

Thermal Resistance, Junction to Ambient ^{(Note 2)}

℃/W

Note 1) Pulse Width≦10㎲, Duty Cycle≦1%

Note 2) Surface Mounted on 2 ×2 FR4 Board

Marking

EQUIVALENT CIRCUIT

Lot No.

Type Name

2013. 7. 19

Revision No : 1

1/4

12 3 4

中文翻译

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