Datasheet > 2N7002KW

2N7002KW

更新时间： 2024-02-06 00:02:10

品牌	Logo	应用领域
强茂 - PANJIT		晶体晶体管开关光电二极管 PC
页数	文件大小	规格书
5页	171K
描述
60V N-Channel Enhancement Mode MOSFET - ESD Protected

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2N7002KW 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.55	Is Samacsys：	N
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

2N7002KW 数据手册

2N7002KW

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES

• R_DS(ON), V_GS@10V,I_DS@500mA=3Ω

• R_DS(ON), V_GS@4.5V,I_DS@200mA=4Ω

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Very Low Leakage Current In Off Condition

• Specially Designed for Battery Operated Systems, Solid-State Relays

Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.

• ESD Protected 2KV HBM

• Component are in compliance with EU RoHS 2002/95/EC directives

MECHANICALDATA

• Case: SOT-323 Package

• Terminals : Solderable per MIL-STD-750,Method 2026

• Marking : K72

Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )

PARAMETER

Symbol

V_{D S}

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

V_{G S}

+20

115

800

I_D

1 )

Pulsed Drain Current

I_{D M}

T_A=25^O

T_A=75^O

200

120

Maximum Power Dissipation

P_D

^OC

Operating Junction and Storage Temperature Range

Junction-to Ambient Thermal Resistance(PCB mounted)²

T_J,T_{S T G}

-55 to + 150

625

R_{θ J A}

^OC/W

Note: 1. Maximum DC current limited by the package

2. Surface mounted on FR4 board, t < 5 sec

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

STAD-JAN.11.2007

PAGE . 1

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