Datasheet > 2N7002KV

2N7002KV

更新时间： 2024-10-15 18:09:43

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
8页	695K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 0.3 A;Rds-on (typ) (mOhms) : 1300 mOhms;Total Gate Charge (nQ) typ

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中文翻译

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数据手册

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2N7002KV 数据手册

2N7002KV

N-Channel Enhancement Mode Power MOSFET

General Features

V_DS= 60V,I_D= 0.3A

R_DS(ON)< 3Ω @ V_GS=5V

R_DS(ON)< 2Ω @ V_GS=10V

ESD Rating HBM 2300V

Schematic diagram

High power and current handing capability

Lead free product is acquired

Surface mount package

H702K

Application

Direct logic-level interface: TTL/CMOS

Drivers: relays, solenoids, lamps, hammers,display,

memories, transistors, etc.

Marking and pin assignment

Battery operated systems

Solid-state relays

P/N suffix V means AEC-Q101 qualified, e.g:2N7002KV

Halogen-free

SOT-23 top view

Package Marking And Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

3000 units

H702K

2N7002K

SOT-23

Ø180mm

8 mm

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

0.3

V^GS

T_A=25

Continuous Drain Current (T_J=150

)

I_D

T_A=100

0.19

0.8

Drain Current-Pulsed ^{(Note 1)}

Maximum Power Dissipation

I_DM

P_D

0.35

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

350

2020-11/15

REV:O

12 3 4 5 6 7 8

中文翻译

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2N7002KW	CJ	获取价格	SOT-323
2N7002KW	UTC	获取价格	N-CH
2N7002KW_10	PANJIT	获取价格	60V N-Channel Enhancement Mode MOSFET - ESD Protected
2N7002KW_14	PANJIT	获取价格	60V N-Channel Enhancement Mode MOSFET - ESD Protected
2N7002KW_15	SECOS	获取价格	N-Ch Small Signal MOSFET with ESD Protection