Datasheet > 2N7002KW

2N7002KW

更新时间： 2024-02-01 12:09:09

品牌	Logo	应用领域
SECOS		晶体晶体管开关光电二极管 PC
页数	文件大小	规格书
4页	527K
描述
N-Ch Small Signal MOSFET with ESD Protection

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技术参数
数据手册

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2N7002KW 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.55	Is Samacsys：	N
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

2N7002KW 数据手册

2N7002KW

115mA , 60V, R_DS(ON)4 

N-Ch Small Signal MOSFET with ESD Protection

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

SOT-323



R_DS(ON), V_GS@10V, I_DS@500mA=3



R_DS(ON), V_GS@4.5V, I_DS@200mA=4

Advanced Trench Process Technology

High Density Cell Design For Ultra Low On-Resistance

Very Low Leakage Current In Off Condition

Specially Designed for Battery Operated Systems,

Solid-State Relays Drivers：Relays, Displays, Lamps,

Solenoids, Memories, etc.

Top View

C B



ESD Protected 2KV HBM

In compliance with EU RoHS 2002/95/EC directives

MECHANICAL DATA



Case: SOT-323 Package

Terminals: Solderable per MIL-STD-750,

Method 2026

Millimeter

Min. Max.

Millimeter

REF.



Min.

Max.

0.100 REF.

0.525 REF.

1.80

1.15

0.80

1.20

0.20

2.20

2.45

1.35

1.10

1.40

0.40

0.08

0.25

MARKING

0.650 TYP.

K72

Drain



PACKAGE INFORMATION



Gate

Package

MPQ

LeaderSize

SOT-323

7’ inch



Source

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

±20

Continuous Drain Current

Pulsed Drain Current ¹

115

I_DM

800

T_A=25°C

T_A=75°C

200

Maximum Power Dissipation

P_D

120

Thermal Resistance Junction-Ambient (PCB mounted) ²

625

°C / W

°C

R_

Operating Junction and Storage Temperature

T_J, T_STG

-55~150

Notes:

1. Maximum DC current limited by the package.

2. Surface mounted on FR4 board, t < 5sec.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

31-Mar-2011 Rev. A

Page 1 of 4

12 3 4

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