Datasheet > 2N7002KU_15

2N7002KU_15

更新时间： 2024-11-22 01:24:03

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
6页	689K
描述
60V N-Channel MOSFET

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数据手册

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2N7002KU_15 数据手册

2N7002KU

60V N-Channel MOSFET

Main Product Characteristics

V_DSS

R_DS(on)

I_D

60V

3Ω(max.)

0.3A

MarkingandPin

Assignment

SOT-23

SchematicDiagram

Features and Benefits



AdvancedMOSFETprocesstechnology

Special designed for PWM, load switching and

generalpurposeapplications



Ultralowon-resistancewithlowgatecharge

Fastswitching andreversebodyrecovery

ESDRating：2000VHBM

150℃operating temperature

Leadfreeproduct

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with

high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable

devicefor useinpower switching applicationandawidevarietyof other applications.

Absolute Max Rating

Symbol

I_D@ TC = 25°C

I_DM

Parameter

Max.

0.3

Units

Continuous Drain Current, V_GS@ 10V①

Pulsed Drain Current②

1.2

P_D@TC = 25°C

V_DS

0.63

Power Dissipation③

Drain-Source Voltage

V_GS

Gate-to-Source Voltage

± 20

T_JT_STG

Operating Junction and Storage Temperature Range

-55 to +150

°C

Thermal Resistance

Symbol

Characteristics

Junction-to-ambient (t ≤ 10s) ④

Typ.

Max.

Units

R_θJA

—

200

℃/W

www.goodark.com

Page 1 of 6

Rev.1.0

12 3 4 5 6

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