2N7002KU
60V N-Channel MOSFET
Main Product Characteristics
VDSS
RDS(on)
ID
60V
3Ω(max.)
0.3A
MarkingandPin
Assignment
SOT-23
SchematicDiagram
Features and Benefits
AdvancedMOSFETprocesstechnology
Special designed for PWM, load switching and
generalpurposeapplications
Ultralowon-resistancewithlowgatecharge
Fastswitching andreversebodyrecovery
ESDRating:2000VHBM
150℃operating temperature
Leadfreeproduct
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
devicefor useinpower switching applicationandawidevarietyof other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
IDM
Parameter
Max.
0.3
Units
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
A
1.2
PD @TC = 25°C
VDS
0.63
W
V
Power Dissipation③
Drain-Source Voltage
60
VGS
Gate-to-Source Voltage
± 20
V
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to +150
°C
Thermal Resistance
Symbol
Characteristics
Junction-to-ambient (t ≤ 10s) ④
Typ.
Max.
Units
RθJA
—
200
℃/W
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