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2N7002KTB6 PDF预览

2N7002KTB6

更新时间: 2024-11-18 12:50:03
品牌 Logo 应用领域
强茂 - PANJIT 晶体晶体管开关光电二极管
页数 文件大小 规格书
5页 150K
描述
60V N-Channel Enhancement Mode MOSFET - ESD Protected

2N7002KTB6 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.55Is Samacsys:N
其他特性:ULTRA-LOW RESISTANCE配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):0.115 A
最大漏源导通电阻:3 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):5 pFJESD-30 代码:R-PDSO-F6
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2N7002KTB6 数据手册

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2N7002KTB6  
60V N-Channel Enhancement Mode MOSFET - ESD Protected  
SOT-563  
FEATURES  
• RDS(ON), VGS@10V,IDS@500mA=3Ω  
• RDS(ON), VGS@4.5V,IDS@200mA=4Ω  
• Advanced Trench Process Technology  
• High Density Cell Design For Ultra Low On-Resistance  
• Very Low Leakage Current In Off Condition  
• Specially Designed for Battery Operated Systems, Solid-State Relays  
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.  
• ESD Protected 2KV HBM  
• In compliance with EU RoHS 2002/95/EC directives  
MECHANICALDATA  
• Case: SOT-563 Package  
Terminals : Solderable per MIL-STD-750,Method 2026  
6
5
4
• Marking : 27  
1
2
3
Fig.56  
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )  
PARAMETER  
Symbol  
VDS  
Limit  
60  
Units  
V
Drain-Source Voltage  
Gate-Source Voltage  
VGS  
ID  
+20  
115  
800  
V
mA  
Continuous Drain Current  
1)  
Pulsed Drain Current  
IDM  
mA  
TA=25OC  
TA=75OC  
200  
150  
Maximum Power Dissipation  
PD  
mW  
OC  
Operating Junction and Storage Temperature  
Range  
TJ,TSTG  
RθJA  
-55 to + 150  
883  
Junction-to Ambient Thermal Resistance(PCB mounted)2  
OC/W  
Note: 1. Maximum DC current limited by the package  
2. Surface mounted on FR4 board, t < 5 sec  
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE  
July 13.2010-REV.00  
PAGE . 1  

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