Datasheet > 2N7002KTB_14

2N7002KTB_14

更新时间： 2022-02-26 14:16:08

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
7页	270K
描述
60V N-Channel Enhancement Mode MOSFET - ESD Protected

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2N7002KTB_14 数据手册

2N7002KTB

ELECTRICAL CHARACTERISTICS

Parameter

Static

Symbol

Test Condition

Min.

Typ.

Max.

Units

Drain-Source Breakdown

Voltage

BV_{D SS}

V_{GS (th)}

R_{DS (on)}

I_{D SS}

V_GS=0V, I_D=10A

V_DS=V_GS, I_D=250A

V_GS=4.5V, I _D=200mA

V_GS=10V, I _D=500mA

V_DS=60V, V_GS=0V

2.5

4.0

3.0

Gate Threshold Voltage

Drain-Source On-State

Resistance



Drain-Source On-State

Resistance

Zero Gate Voltage Drain

Current

A

Gate Body Leakage

Forward Transconductance

Dynamic

I_GSS

V_GS=+20V, V_DS=0V

V_DS=15V, I_D=250mA

+10

g_fS

100

V_DS=15V, I_D=200mA

V_GS=4.5V

Total Gate Charge

Q_g

0.8

Turn-On Delay Time

Turn-Off Delay Time

Input Capacitance

Output Capacitance

td_(on)

td_(off)

C_iss

125

V_DD=30V , R_L=150

I_D=200mA , V_GEN=10V

R_G=10

V_DS=25V, V_GS=0V

f=1.0MH_Z

C_oss

C_rss

Reverse Transfer

Capacitance

Source-Drain Diode

Diode Forward Voltage

V_SD

I_s

I_S=200mA , V_GS=0V

0.82

1.3

115

800

Continuous Diode Forward

Current

Pulsed Diode Forward

Current

I_sM

Switching

Gate Charge

Test Circuit

VGS

OUT

1mA

July 20,2012-REV.02

PAGE . 2

123 4 5 6 7

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