Datasheet > 2N7002K-T1

2N7002K-T1

更新时间： 2024-02-07 13:23:00

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	219K
描述
N-Channel 60-V (D-S) MOSFET

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2N7002K-T1 数据手册

2N7002K

Vishay Siliconix

SPECIFICATIONS T = 25 °C, unless otherwise noted

Limits

Typ.^a

Parameter

Symbol

Test Conditions

Min.

Max.

Unit

Static

V_DS

V_GS= 0 V, I_D= 10 µA

Drain-Source Breakdown Voltage

V_GS(th)

V_DS= V_GS, I_D= 250 µA

Gate-Threshold Voltage

Gate-Body Leakage

2.5

V_DS= 0 V, V_GS

_DS= 0 V, V_GS

20 V

15 V

10 V

µA

I_GSS

_DS= 0 V, V_GS

150

1000

100

_DS= 0 V, V_GS

10 V, T_J= 85 °C

5 V

V_DS= 60 V, V_GS= 0 V

_DS= 0 V, V_GS=

I_DSS

Zero Gate Voltage Drain Current

On-State Drain Current^a

µA

_DS= 60 V, V_GS= 0 V , T_J= 125 °C

V_GS= 10 V, V_DS= 7.5 V

500

800

500

I_D(on)

_GS= 4.5 V, V_DS= 10 V

V_GS= 10 V, I_D= 500 mA

_GS= 4.5 V, I_D= 200 mA

Drain-Source On-Resistance^a

R_DS(on)

Forward Transconductance^a

Diode Forward Voltage

g_fs

V_DS= 10 V, I_D= 200 mA

I_S= 200 mA, V_GS= 0 V

100

V_SD

1.3

0.6

Dynamic^a

V_DS= 10 V, V_GS= 4.5 V

Q_g

Total Gate Charge

0.4

I_D≅ 250 mA

C_iss

C_oss

C_rss

Input Capacitance

V_DS= 25 V, V_GS= 0 V

f = 1 MHz

Output Capacitance

Reverse Transfer Capacitance

2.5

Switching^{a, b, c}

Turn-On Time

Turn-Off Time

t_d(on)

t_d(off)

V_DD= 30 V, R_L= 150 Ω

I_D≅ 200 mA, V_GEN= 10 V, R_G= 10 Ω

Notes:

a. For DESIGN AID ONLY, not subject to production testing.

b. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.

c. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

www.vishay.com

Document Number: 71333

S09-0857-Rev. E, 18-May-09

123 4 5 6 7...9

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