Datasheet > 2N6660_11

2N6660_11

更新时间： 2024-11-09 07:29:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	129K
描述
N-Channel 60 V (D-S) MOSFET

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数据手册

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2N6660_11 数据手册

2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV

www.vishay.com

Vishay Siliconix

N-Channel 60 V (D-S) MOSFET

FEATURES

• Military Qualified

PRODUCT SUMMARY

V_DS(V)

• Low On-Resistence: 1.3 

• Low Threshold: 1.7 V

• Low Input Capacitance: 35 pF

R_DS(on)() at V_GS= 10 V

Configuration

Single

• Fast Switching Speed: 8 ns

• Low Input and Output Leakage

TO-205AD

(TO-39)

BENEFITS

• Guaranteed Reliability

• Low Offset Voltage

• Low-Voltage Operation

• Easily Driven Without Buffer

• High-Speed Circuits

• Low Error Voltage

APPLICATIONS

• Hi-Rel Systems

• Direct Logic-Level Interface: TTL/CMOS

Top View

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc.

• Battery Operated Systems

• Solid-State Relays

ORDERING INFORMATION

DESCRIPTION/DSCC

PART NUMBER

VISHAY ORDERING

PART NUMBER

PART

PACKAGE

Commercial

2N6660

Commercial, Lead (Pb)-free

2N6660-E3

www.vishay.com/doc?67884

See -2 Flow Document

2N6660-2

JANTX2N6660 (std Au leads)

JANTX2N6660 (with solder)

JANTX2N6660P (with PIND)

JANTXV2N6660 (std Au leads)

JANTXV2N6660P (with PIND)

2N6660JTX02

2N6660JTXL02

2N6660JTXP02

2N6660JTXV02

2N6660JTVP02

TO-205AD

(TO-39)

2N6660JANTX

2N6660JANTXV

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

0.99

0.62

Continuous Drain Current (T_J= 150 °C)

I_D

T_C= 100 °C

Pulsed Drain Current^a

I_DM

P_D

T_C= 25 °C

T_A= 25 °C

6.25

Maximum Power Dissipation

0.725

170

Thermal Resistance, Junction-to-Ambient^b

Thermal Resistance, Junction-to-Case

R_thJA

R_thJC

°C/W

°C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

Notes

a. Pulse width limited by maximum junction temperature.

b. Not required by military spec.

S11-1542-Rev. D, 01-Aug-11

Document Number: 70223

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与2N6660_11相关器件

型号	品牌	获取价格	描述	数据表
2N6660-2	VISHAY	获取价格	N-Channel 60 V (D-S) MOSFET
2N6660B	TEMIC	获取价格	Small Signal Field-Effect Transistor, 1.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
2N6660C4	SEME-LAB	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
2N6660CSM4	SEME-LAB	获取价格	N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR
2N6660CSM4_0809	SEME-LAB	获取价格	N–CHANNEL ENHANCEMENT MODE MOSFET
2N6660-E3	VISHAY	获取价格	Trans MOSFET N-CH 60V 0.99A 3-Pin TO-205AD
2N6660JANTX	VISHAY	获取价格	N-Channel 60 V (D-S) MOSFET
2N6660JANTXV	VISHAY	获取价格	N-Channel 60 V (D-S) MOSFET
2N6660JTVP02	VISHAY	获取价格	19500/547 JANTXV2N6660P WITH PIND
2N6660JTXL02	VISHAY	获取价格	19500/547 JANTX2N6660 W/SOLDER DIP