Datasheet > 2N6661

2N6661

更新时间： 2024-11-26 18:09:59

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2N6661 数据手册

SENSITRON

2N6661

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 5518, REV -

HERMETIC POWER MOSFET

N-CHANNEL

FEATURES:



90 Volt, 3.6 Ohm low capacitance MOSFET

Hermetically Sealed TO-205/TO-39 package

S-100 screening available – 2N6661S

Low input and Output Leakage

MAXIMUM RATINGS

ALL RATINGS ARE AT T_A= 25C UNLESS OTHERWISE SPECIFIED.

RATING

SYMBOL

MIN.

TYP.

MAX.

 20

0.86

0.54

UNITS

Volts

DRAIN TO SOURCE VOLTAGE

GATE TO SOURCE VOLTAGE

CONTINUOUS DRAIN CURRENT V_GS=10V, T_C= 25C

V_GS=10V, T_C= 100C

V_DS

V_GS

I_D

Amps

I_DM

T_OP/T_STG

R_JC

-55

150

Amps

C

C/W

Watts

PULSED DRAIN CURRENT

@ T_C= 25C

OPERATING AND STORAGE TEMPERATURE

TERMAL RESISTANCE JUNCTION TO CASE

TOTAL DEVICE DISSIPATION @ T_C= 25C

P_D

6.25

ELECTRICAL CHARACTERISTICS

DRAIN TO SOURCE BREAKDOWN VOLTAGE

BV_DSS

R_DS(ON)

V_GS(th)

g_fs

125

Volts

V_GS= 0V, I_D= 10μA

DRAIN TO SOURCE ON STATE RESISTANCE

V_GS= 5V, I_D= 0.3A



3.8

3.6

6.7

1.6

1.3

1.8

5.3

4.4

7.5

2.0

2.5

V_GS= 10V, I_D= 1A

V_GS= 10V, I_D= 1A, T_J= 125C

GATE THRESHOLD VOLTAGE

V_DS= V_GS, I_D= 1mA

0.8

0.3

Volts

V_DS= V_GS, I_D= 1mA, T_J= 125C

V_DS= V_GS, I_D= 1mA, T_J= -55C

FORWARD TRANSCONDUCTANCE

V_DS= 7.5V, I_DS= 0.475A

ZERO GATE VOLTAGE DRAIN CURRENT

V_DS=72V, V_GS= 0V

0.34

S(1/)

A

I_DSS

I_GSS

100

V_DS= 72V, V_GS= 0V, T_J= 125C

GATE TO SOURCE LEAKAGE FORWARD @ REVERSE

V_GS= ± 20V

V_GS= ± 20V, T_J= 125C

±100

±500

1.4

TURN ON TIME

TURN OFF TIME

V_DD= 25V, V_GS= 10V

I_D= 1A, R_G= 23

T_J= 25C, I_S= 0.86A,

V_GS= 0V

t_(ON)

t_(OFF)

V_SD

0.7

0.9

nsec

Volts

DIODE FORWARD VOLTAGE

INPUT CAPACITANCE

OUTPUT CAPACITANCE

V_GS= 0 V

V_DS= 25 V

f = 1 MHz

C_iss

C_oss

C_rss

REVERSE TRANSFER CAPACITANCE

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PHONE (631) 586-7600  FAX (631) 242-9798  www.sensitron.com  sales@sensitron.com

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