Datasheet > 2N6661_10

2N6661_10

更新时间： 2022-09-16 15:37:59

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SEME-LAB		/
页数	文件大小	规格书
3页	79K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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2N6661_10 数据手册

N-CHANNEL ENHANCEMENT

MODE POWER MOSFET

2N6661

•

= 90V , I = 0.9A, R

= 4.0ꢀ

DS(ON)

DSS

Fast Switching

•

Low Threshold Voltage (Logic Level)

Low C

ISS

•

Integral Source-Drain Body Diode

Hermetic Metal TO39 Package

High Reliability Screening Options Available

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Drain – Source Voltage

Gate – Source Voltage

Continuous Drain Current

Pulsed Drain Current ⁽¹⁾

Total Power Dissipation at

90V

20V

T = 25°C

0.9A

3.0A

T ≤ 25°C

De-rate T > 25°C

40mW/°C

725mW

5.8mW/°C

-55 to +150°C

-65 to +150°C

T ≤ 25°C

Total Power Dissipation at

De-rate T > 25°C

Operating Temperature Range

Storage Temperature Range

stg

THERMAL PROPERTIES

Symbols

Parameters

Min.

Typ. Max. Units

Thermal Resistance, Junction To Case

Thermal Resistance, Junction To Ambient

°C/W

θJC

172

θJA

Notes

(1) Repetitive Rating: Pulse width limited by maximum junction temperature

(2) Pulse Width ≤ 300us, δ ≤ 2%

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

Document Number 3092

Issue 5

Page 1 of 3

Website: http://www.semelab-tt.com

12 3

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