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2N6666 PDF预览

2N6666

更新时间: 2024-11-25 12:50:15
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管局域网
页数 文件大小 规格书
2页 112K
描述
isc Silicon PNP Darlington Power Transistor

2N6666 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.56
Base Number Matches:1

2N6666 数据手册

 浏览型号2N6666的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Darlington Power Transistor  
2N6666  
DESCRIPTION  
·High DC Current Gain-  
: hFE = 1000(Min)@ IC= -3A  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS) = -40V(Min)  
·Low Collector-Emitter Saturation Voltage-  
: VCE(sat) = -2.0V(Max)@ IC= -3A  
·Complement to Type 2N6386  
APPLICATIONS  
·Designed for general purpose amplifier and low speed  
switching applications.  
ABSOLUTE MAXIMUM RATINGS (Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
-40  
UNIT  
V
-40  
V
-5  
V
Collector Current-Continuous  
Collector Current-Peak  
Base Current-DC  
-8  
A
ICM  
-15  
A
IB  
-250  
65  
mA  
Collector Power Dissipation  
TC=25  
PC  
W
Collector Power Dissipation  
Ta=25℃  
2
Tj  
Junction Temperature  
150  
-65~150  
Tstg  
Storage Temperature Range  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
1.92  
62.5  
UNIT  
/W  
/W  
Thermal Resistance,Junction to Case  
Thermal Resistance,Junction to Ambient  
Rth j-c  
Rth j-a  
isc Websitewww.iscsemi.cn  

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