Datasheet > 2N6667_05

2N6667_05

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	81K
描述
Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60−80 V, 65 W

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2N6667_05 数据手册

2N6667, 2N6668

Darlington Silicon

Power Transistors

Designed for general−purpose amplifier and low speed switching

applications.

• High DC Current Gain −

http://onsemi.com

= 3500 (Typ) @ I = 4.0 Adc

• Collector−Emitter Sustaining Voltage − @ 200 mAdc

PNP SILICON

DARLINGTON

= 60 Vdc (Min) − 2N6667

= 80 Vdc (Min) − 2N6668

CEO(sus)

• Low Collector−Emitter Saturation Voltage −

= 2.0 Vdc (Max)@ I = 5.0 Adc

POWER TRANSISTORS

10 A, 60−80 V, 65 W

CE(sat)

• Monolithic Construction with Built−In Base−Emitter Shunt Resistors

• TO−220AB Compact Package

• Complementary to 2N6387, 2N6388

• Pb−Free Packages are Available*

MARKING

DIAGRAM

STYLE 1:

PIN 1. BASE

2N666x

COLLECTOR

AYWWG

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 221A−09

TO−220AB

BASE

= 7 or 8

= Assembly Location

= Year

≈ 8 k

≈ 120

WW = Work Week

= Pb−Free Package

EMITTER

Figure 1. Darlington Schematic

ORDERING INFORMATION

Device

2N6667

Package

Shipping

50 Units/Rail

TO−220AB

2N6667G

TO−220AB

(Pb−Free)

2N6668

TO−220AB

50 Units/Rail

2N6668G

TO−220AB

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

June, 2005 − Rev. 5

2N6667/D

12 3 4 5 6

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