是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220AB | 包装说明: | TO-220AB, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.79 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 10 A | 集电极-发射极最大电压: | 60 V |
配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 100 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N6667BU | ONSEMI |
获取价格 |
TRANSISTOR 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB, 3 PIN, BIP General Purpose Pow | |
2N6667C | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
2N6667D1 | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
2N6667-DR6260 | RENESAS |
获取价格 |
10A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB | |
2N6667-DR6269 | RENESAS |
获取价格 |
10A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB | |
2N6667-DR6274 | RENESAS |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
2N6667-DR6280 | RENESAS |
获取价格 |
10A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB | |
2N6667G | ONSEMI |
获取价格 |
Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60W | |
2N6667L | MOTOROLA |
获取价格 |
10A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB | |
2N6667LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast |