2N6660CSM4
MECHANICAL DATA
N–CHANNEL
ENHANCEMENT MODE
MOSFET
Dimensions in mm (inches)
1.40 0.15
(0.055 0.006)
5.59 0.1ꢀ
(0.22 0.005)
0.25 0.0ꢀ
(0.01 0.001)
0.2ꢀ
(0.009)
rad.
VDSS
ID
RDS(on)
60V
1.0A
3.0Ω
3
4
2
0.2ꢀ
(0.009)
1
min.
1.02 0.20
2.0ꢀ 0.20
FEATURES
(0.04 0.00ꢁ)
(0.0ꢁ 0.00ꢁ)
•
•
•
•
Faster switching
Low Ciss
Integral Source-Drain Diode
High Input Impedance and High Gain
LCC3 PACKAGE (MO-041BA)
(Underside View)
DESCRIPTION
PAD 1 – DRAIN
PAD 2 – N/C
PAD 3 – SOURCE
PAD 4 – GATE
This enhancement-mode (normally-off) vertical DMOS FET is
ideally suited to a wide range of switching and amplifying
applications where high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Hi-Reliability Military and Space screening options available
ABSOLUTE MAXIMUM RATINGS TCASE = 25°C unless otherwise stated
VDS
Drain - Source Voltage
60V
1.0A
ID
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Pulsed (Note 1)
IDM
ꢀA
VGS
Ptot(1)
Gate - Source Voltage
20V
Total Power Dissipation at T mounting base ≤ 25°C
De-rate Linearly above 25°C
ꢀ.0W
0.020W/°C
0.5W
Ptot(2)
Total Power Dissipation at Tambient ≤ 25°C
Operating and Storage Junction Temperature Range
Tj,Tstg
-55 to +175°C
THERMAL DATA
Rthj-mb
Thermal Resistance Junction – Mounting base
Max
50
°C/W
NOTES:
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width ≤ ꢀ00µS, Duty Cycle , δ 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
DOC 7777, ISSUE 2
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk