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2N6661 PDF预览

2N6661

更新时间: 2024-11-26 17:01:15
品牌 Logo 应用领域
TTELEC /
页数 文件大小 规格书
3页 77K
描述
N-Channel Enhancement Mode Power MOSFET

2N6661 数据手册

 浏览型号2N6661的Datasheet PDF文件第2页浏览型号2N6661的Datasheet PDF文件第3页 
N-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
2N6661  
V
= 90V , I = 0.9A, R  
= 4.0Ω  
DS(ON)  
DSS  
Fast Switching  
D
Low Threshold Voltage (Logic Level)  
Low C  
ISS  
Integral Source-Drain Body Diode  
Hermetic Metal TO39 Package  
High Reliability Screening Options Available  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
A
V
V
I
Drain – Source Voltage  
Gate – Source Voltage  
Continuous Drain Current  
Pulsed Drain Current (1)  
Total Power Dissipation at  
90V  
DS  
GS  
20V  
T = 25°C  
C
0.9A  
D
I
3.0A  
DM  
P
T 25°C  
5W  
D
C
De-rate T > 25°C  
C
40mW/°C  
725mW  
5.8mW/°C  
-55 to +150°C  
-65 to +150°C  
P
T 25°C  
Total Power Dissipation at  
D
A
De-rate T > 25°C  
A
T
T
Operating Temperature Range  
Storage Temperature Range  
J
stg  
THERMAL PROPERTIES  
Symbols  
Parameters  
Max.  
25  
Units  
°C/W  
°C/W  
R
Thermal Resistance, Junction To Case  
Thermal Resistance, Junction To Ambient  
θJC  
R
172  
θJA  
Notes  
(1) Repetitive Rating: Pulse width limited by maximum junction temperature  
(2) Pulse Width 300us, δ ≤ 2%  
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.  
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However  
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to  
verify that datasheets are current before placing orders.  
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB  
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com  
Document Number 3092  
Issue 6  
Page 1 of 3  
Website: http://www.semelab-tt.com  

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