Datasheet > 2N6660N2

2N6660N2

更新时间： 2024-11-25 20:45:43

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
3页	331K
描述
Transistor,

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技术参数
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2N6660N2 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2N6660N2 数据手册

2N6660

N-Channel Enhancement-Mode

Vertical DMOS FET

Features

General Description

► Free from secondary breakdown

► Low power drive requirement

► Ease of paralleling

The Supertex 2N6660 is an enhancement-mode (normally-

off) transistor that utilizes a vertical DMOS structure

and Supertex’s well-proven silicon-gate manufacturing

process. This combination produces a device with the

power handling capabilities of bipolar transistors, and the

high input impedance and positive temperature coefﬁcient

inherent in MOS devices. Characteristic of all MOS

structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

► Low C_ISSand fast switching speeds

► Excellent thermal stability

► Integral source-drain diode

► High input impedance and high gain

► Complementary N- and P-Channel devices

► Hi-Rel processing available

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

Applications

► Motor controls

► Converters

► Ampliﬁers

► Switches

► Power supply circuits

► Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Ordering Information

R_DS(ON)

(max)

(Ω)

I_D(ON)

(min)

(A)

BV_DSS/BV_DGS

Device

Package Option

(V)

2N6660

TO-39

3.0

1.5

Absolute Maximum Ratings

Parameter

Pin Conﬁguration

Value

BV_DSS

Drain-to-source voltage

Drain-to-gate voltage

BV_DGS

GATE

SOURCE

Gate-to-source voltage

±20V

Operating and storage temperature

Soldering temperature^*

-55°C to +150°C

+300°C

DRAIN

TO-39

(Case : Drain)

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Product Marking

* Distance of 1.6mm from case for 10 seconds.

YY = Year Sealed

WW = Week Sealed

2N6660

Y Y WW

TO-39

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

12 3

中文翻译

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与2N6660N2相关器件

型号	品牌	获取价格	描述	数据表
2N6660X	SEME-LAB	获取价格	N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR
2N6661	VISHAY	获取价格	N-Channel 80-V and 90-V (D-S) MOSFETS
2N6661	NJSEMI	获取价格	TMOS SWITCHING TRANSISTOR
2N6661	SEME-LAB	获取价格	N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR
2N6661	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
2N6661	MOTOROLA	获取价格	TMOS SWITCHING FET TRANSISTORS
2N6661	MICROCHIP	获取价格	2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS stru
2N6661	TTELEC	获取价格	N-Channel Enhancement Mode Power MOSFET
2N6661	SENSITRON	获取价格	NCH
2N6661_10	SEME-LAB	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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