1SS404
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS404
Unit: mm
High Speed Switching Applications
•
•
•
•
Two-pin small packages are suitable for higher mounting densities
Low forward voltage: V = 0.38 V (typ.)
F (3)
Low reverse current: I = 50 μA (max)
R
Small total capacitance: C = 46 pF (typ.)
T
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
V
25
20
V
V
RM
V
R
Maximum (peak) forward current
Average forward current
Power dissipation
I
700
mA
mA
mW
°C
FM
I
300
O
USC
P
200 (Note 1)
125
Junction temperature
T
j
Storage temperature range
Operating temperature range
T
−55 to 125
−40 to 100
°C
stg
opr
JEDEC
JEITA
―
―
T
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on a glass epoxy board of 20 mm × 20 mm,
pad dimension 4 mm × 4 mm.
Marking
Equivalent Circuit (top view)
S 5
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
V
V
V
I
I
I
= 1 mA
⎯
⎯
⎯
⎯
⎯
0.16
0.22
0.38
⎯
⎯
⎯
F (1)
F (2)
F (3)
F
F
F
Forward voltage
= 10 mA
= 300 mA
0.45
50
Reverse current
I
V
V
= 20 V
μA
R
R
R
Total capacitance
C
T
= 0, f = 1 MHz
46
⎯
pF
Start of commercial production
1999-06
1
2014-03-01