Datasheet > 1SS404_07

1SS404_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
2页	146K
描述
Silicon Epitaxial Schottky Barrier Type

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数据手册

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1SS404_07 数据手册

BL Galaxy Electrical

Production specification

Silicon Epitaxial Planar Diode

1SS404

FEATURES

Lead-free

Small surface mounting type.

High speed.

High reliability with high surge current handing capability

APPLICATIONS

SOD-323

High speed switching

ORDERING INFORMATION

Type No.

1SS404

Marking

S51

Package Code

SOD-323

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Parameter

Symbol

V_RM

V_R

Limits

Unit

Peak reverse voltage

DC Reverse Voltage

Peak forward Current

Average Rectified Output Current

Junction temperature

I_FM

700

℃

I_O

300

T_j

125

Storage temperature

T_STG

-55~+125

℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Min. Max.

Unit

Conditions

0.16

I_F=1mA

Forward voltage

V_F

0.22

0.38

I_F=100mA

I_F=300mA

Reverse current

I_R

μA

V_R=20V

Capacitance between terminals

C_T

V_R=0V,f=1MHz

Document number: BL/SSSDB007

Rev.A

www.galaxycn.com

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