Datasheet > 1SS404WS

1SS404WS

更新时间： 2024-11-18 06:16:15

品牌	Logo	应用领域
商升特 - SEMTECH		肖特基二极管
页数	文件大小	规格书
3页	173K
描述
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

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中文翻译

获取价格

数据手册

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1SS404WS 数据手册

1SS404WS

SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

Applications

PINNING

DESCRIPTION

Cathode

• High speed switching

Anode

Top View

Marking Code: "R9"

Simplified outline SOD-323 and symbol

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Maximum (Peak) Reverse Voltage

Reverse Voltage

V_RM

V_R

I_O

Average Forward Current

Maximum (Peak) Forward Current

Power Dissipation

300

I_FM

P_tot

T_J

700

200

Junction Temperature

125

Storage Temperature Range

T_s

- 55 to + 125

Characteristics at T_a= 25 C

Parameter

Typ.

Max.

Symbol

Unit

Forward Voltage

at I_F= 300 mA

V_F

I_R

0.45

Reverse Current

at V_R= 20 V

µA

Total Capacitance

at f = 1 MHz

C_T

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 01/09/2006

12 3

中文翻译

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