Datasheet > 1SS413

1SS413

更新时间： 2024-11-18 05:57:39

品牌	Logo	应用领域
商升特 - SEMTECH		肖特基二极管光电二极管
页数	文件大小	规格书
2页	135K
描述
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

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1SS413 数据手册

1SS413

SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

for high speed switching application

PINNING

DESCRIPTION

Cathode

Anode

Top View

Marking Code: "Q"

Simplified outline SOD-523 and symbol

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Peak Reverse Voltage

Reverse Voltage

V_RM

V_R

I_FM

I_O

Peak Forward Current

Average Forward Current

Surge Current (10 ms)

Power Dissipation

100

I_FSM

P_tot

T_J

100

Junction Temperature

Storage Temperature

125

T_s

- 55 to + 125

Characteristics at T_a= 25 C

Parameter

Symbol

Typ.

Max.

Unit

Forward Voltage

at I_F= 50 mA

V_F

I_R

0.55

0.5

Reverse Current

at V_R= 20 V

µA

Total Capacitance

at V_R= 0 V, f = 1 MHz

C_T

3.9

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 23/11/2006

中文翻译

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