Datasheet > 1SS417_04

1SS417_04

更新时间： 2024-02-02 07:44:05

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
3页	139K
描述
High Speed Switching Application

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中文翻译

获取价格

数据手册

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1SS417_04 数据手册

1SS417

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS417

High Speed Switching Application

Unit: mm

0.6 0.05

•

Small package

Low forward voltage: V

= 0.56V (typ.)

F (3)

Low reverse current: I = 5µA (Max.)

Maximum Ratings (Ta = 25°C)

0.2

0.05

0.1 0.05

Characteristic

Symbol

Rating

Unit

0.07 M

Maximum (peak) reverse voltage

Reverse voltage

+0.02

-0.03

0.48

Maximum (peak) forward current

Average forward current

Surge current (10ms)

200

100

FSM

P *

Power dissipation

100

°C

fSC

Junction temperature

125

Storage temperature range

Operating temperature range

−55~125

−40~100

JEDEC

JEITA

―

stg

opr

TOSHIBA

Weight: 0.6mg(typ.)

1-1L1A

Mounted on a glass epoxy circuit board of 20 × 20 mm,

pad dimension of 4 × 4 mm.

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

F (1)

F (2)

F (3)

―

= 1mA

―

0.28

0.36

0.56

―

Forward voltage

= 10mA

= 50mA

0.62

Reverse current

= 40V

µA

Total capacitance

= 0, f = 1MH

―

quivalent Circuit (Top View)

Marking

2004-05-26

12 3

中文翻译

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