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1SS416(TPL3) PDF预览

1SS416(TPL3)

更新时间: 2024-11-05 21:16:15
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管
页数 文件大小 规格书
3页 119K
描述
RECTIFIER DIODE,SCHOTTKY,35V V(RRM),EMD2VAR

1SS416(TPL3) 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.66
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.5 V最大非重复峰值正向电流:1 A
元件数量:1最高工作温度:100 °C
最大输出电流:0.1 A最大重复峰值反向电压:35 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKYBase Number Matches:1

1SS416(TPL3) 数据手册

 浏览型号1SS416(TPL3)的Datasheet PDF文件第2页浏览型号1SS416(TPL3)的Datasheet PDF文件第3页 
1SS416  
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type  
1SS416  
High Speed Switching Application  
Unit: mm  
0.6±0.05  
A
z Small package  
z Low forward voltage: V = 0.23V (typ.) @I = 5mA  
F
F
Absolute Maximum Ratings (Ta = 25°C)  
0.2  
±0.05  
Characteristic  
Symbol  
Rating  
Unit  
0.1±0.05  
0.07 M  
A
Maximum (peak) reverse voltage  
Reverse voltage  
V
35  
30  
V
V
RM  
V
R
+0.02  
-0.03  
0.48  
Maximum (peak) forward current  
Average forward current  
Surge current (10ms)  
I
200  
mA  
mA  
A
FM  
I
100  
O
I
1
FSM  
P *  
Power dissipation  
100  
mW  
°C  
°C  
°C  
Junction temperature  
T
125  
j
fSC  
Storage temperature range  
Operating temperature range  
T
55125  
40100  
stg  
opr  
T
JEDEC  
JEITA  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
TOSHIBA  
Weight: 0.6mg(typ.)  
1-1L1A  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*:  
Mounted on a glass epoxy circuit board of 20 × 20mm,  
pad dimension of 4 × 4mm.  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 1mA  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
0.18  
0.23  
0.38  
F (1)  
F (2)  
F (3)  
R(1)  
F
F
F
Forward voltage  
= 5mA  
= 100mA  
0.50  
20  
I
I
V
V
= 10V  
= 30V  
R
R
Reverse current  
μA  
50  
R(2)  
CT  
Total capacitance  
VR = 0, f = 1MHz  
15  
pF  
Equivalent Circuit (Top View)  
Marking  
W
1
2007-11-01  

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