5秒后页面跳转
1SS416TS PDF预览

1SS416TS

更新时间: 2024-11-05 13:03:47
品牌 Logo 应用领域
东芝 - TOSHIBA 整流二极管开关光电二极管
页数 文件大小 规格书
3页 134K
描述
DIODE 0.1 A, 35 V, SILICON, SIGNAL DIODE, FSC2, 1-1X1A, 2 PIN, Signal Diode

1SS416TS 技术参数

生命周期:Obsolete包装说明:R-PDSO-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.68配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-F2元件数量:1
端子数量:2最高工作温度:125 °C
最大输出电流:0.1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.1 W认证状态:Not Qualified
最大重复峰值反向电压:35 V表面贴装:YES
技术:SCHOTTKY端子形式:FLAT
端子位置:DUALBase Number Matches:1

1SS416TS 数据手册

 浏览型号1SS416TS的Datasheet PDF文件第2页浏览型号1SS416TS的Datasheet PDF文件第3页 
1SS416  
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type  
1SS416  
High Speed Switching Application  
Unit: mm  
0.6±0.05  
A
z Small package  
z Low forward voltage: V = 0.23V (typ.) @I = 5mA  
F
F
Absolute Maximum Ratings (Ta = 25°C)  
0.2  
±0.05  
Characteristic  
Symbol  
Rating  
Unit  
0.1±0.05  
0.07 M  
A
Maximum (peak) reverse voltage  
Reverse voltage  
V
35  
30  
V
V
RM  
V
R
+0.02  
-0.03  
0.48  
Maximum (peak) forward current  
Average forward current  
Surge current (10ms)  
I
200  
mA  
mA  
A
FM  
I
100  
O
I
1
FSM  
P *  
Power dissipation  
100  
mW  
°C  
°C  
°C  
Junction temperature  
T
125  
j
fSC  
Storage temperature range  
Operating temperature range  
T
55125  
40100  
stg  
opr  
T
JEDEC  
JEITA  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
TOSHIBA  
Weight: 0.6mg(typ.)  
1-1L1A  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*:  
Mounted on a glass epoxy circuit board of 20 × 20mm,  
pad dimension of 4 × 4mm.  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 1mA  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
0.18  
0.23  
0.38  
F (1)  
F (2)  
F (3)  
R(1)  
F
F
F
Forward voltage  
= 5mA  
= 100mA  
0.50  
20  
I
I
V
V
= 10V  
= 30V  
R
R
Reverse current  
μA  
50  
R(2)  
CT  
Total capacitance  
VR = 0, f = 1MHz  
15  
pF  
Equivalent Circuit (Top View)  
Marking  
W
1
2007-11-01  

与1SS416TS相关器件

型号 品牌 获取价格 描述 数据表
1SS417 TOSHIBA

获取价格

High Speed Switching Application
1SS417(TH3SUMIK) TOSHIBA

获取价格

Rectifier Diode, Schottky, 1 Element, 0.1A, 45V V(RRM), Silicon
1SS417(TL3,T) TOSHIBA

获取价格

Rectifier Diode, Schottky, 1 Element, 0.1A, 45V V(RRM), Silicon
1SS417(TL3OME5) TOSHIBA

获取价格

Rectifier Diode, Schottky, 1 Element, 0.1A, 45V V(RRM), Silicon
1SS417(TL3PC) TOSHIBA

获取价格

Rectifier Diode, Schottky, 1 Element, 0.1A, 45V V(RRM), Silicon
1SS417(TL3SMMD) TOSHIBA

获取价格

Rectifier Diode, Schottky, 1 Element, 0.1A, 45V V(RRM), Silicon
1SS417(TPL3) TOSHIBA

获取价格

RECTIFIER DIODE,SCHOTTKY,45V V(RRM),EMD2VAR
1SS417,L3F(CA TOSHIBA

获取价格

Rectifier Diode, Schottky, 1 Element, 0.1A, 45V V(RRM), Silicon
1SS417,L3M TOSHIBA

获取价格

DIODE SCHOTTKY 40V 100MA FSC
1SS417,L3M(T TOSHIBA

获取价格

Rectifier Diode