Datasheet > 1SS413CT

1SS413CT

更新时间： 2024-11-06 14:56:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	173K
描述
20 V/0.05 A Schottky Barrier Diode, SOD-882(CST2)

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1SS413CT 数据手册

1SS413CT

Schottky Barrier Diode Silicon Epitaxial

1SS413CT

1. Applications

•

High-Speed Switching

2. Features

(1) Low forward voltage : VF(3) = 0.50 V (typ.)

(2) Low reverse current : IR = 0.5 µA (max)

(3) Small total capacitance : Ct = 3.9 pF (typ.)

3. Packaging and Internal Circuit

1: Cathode

2: Anode

CST2

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

Characteristics

Symbol

Note

Rating

Unit

Peak reverse voltage

Reverse voltage

VRM

Peak forward current

IFM

100

Average rectified current

Power dissipation

(Note 1)

(Note 2)

100

Non-repetitive peak forward surge current

Junction temperature

IFSM

125



Storage temperature

Tstg

-55 to 125



Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.

Note 2: Measured with a 10 ms pulse.

Start of commercial production

1999-02

2014-03-11

Rev.1.0

12 3 4 5

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