5秒后页面跳转
1SS405(TPH3) PDF预览

1SS405(TPH3)

更新时间: 2024-01-04 04:47:37
品牌 Logo 应用领域
东芝 - TOSHIBA 测试光电二极管
页数 文件大小 规格书
3页 195K
描述
RECTIFIER DIODE,SCHOTTKY,25V V(RRM),EMD2VAR

1SS405(TPH3) 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.72
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.55 VJESD-30 代码:R-PDSO-F2
最大非重复峰值正向电流:1 A元件数量:1
相数:1端子数量:2
最高工作温度:125 °C最大输出电流:0.05 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.15 W
最大重复峰值反向电压:25 V最大反向电流:0.5 µA
反向测试电压:20 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
Base Number Matches:1

1SS405(TPH3) 数据手册

 浏览型号1SS405(TPH3)的Datasheet PDF文件第2页浏览型号1SS405(TPH3)的Datasheet PDF文件第3页 
1SS405  
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type  
1SS405  
Unit: mm  
High Speed Switching Application  
z
z
z
z
Low forward voltage  
Low reverse current  
Small total capacitance  
: V  
= 0.50V (typ.)  
F (3)  
: I = 0.5μA (max)  
R
: C = 3.9pF (typ.)  
T
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Maximum (peak) reverse Voltage  
Reverse voltage  
V
25  
20  
V
V
RM  
V
R
Maximum (peak) forward current  
Average forward current  
Surge current (10ms)  
I
100  
50  
mA  
mA  
A
FM  
I
O
I
1
FSM  
P *  
JEDEC  
Power dissipation  
150  
125  
55~125  
mW  
°C  
°C  
JEITA  
Junction temperature  
T
j
TOSHIBA  
1-1G1A  
Storage temperature range  
T
Weight: 1.4mg(Typ.)  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*:  
Mounted on a glass epoxy circuit board of 20 × 20 mm,  
pad dimension of 4 × 4 mm.  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 1mA  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
0.33  
0.38  
0.50  
F (1)  
F (2)  
F (3)  
F
F
F
Forward voltage  
= 5mA  
= 50mA  
0.55  
0.5  
Reverse current  
I
V
V
= 20V  
R
R
R
μA  
Total capacitance  
C
T
= 0, f = 1MH  
3.9  
z
pF  
Equivalent Circuit (Top View)  
Marking  
A7  
2007-11-01  
1

与1SS405(TPH3)相关器件

型号 品牌 获取价格 描述 数据表
1SS405(TPL3,F) TOSHIBA

获取价格

RECTIFIER DIODE,SCHOTTKY,25V V(RRM),EMD2VAR
1SS405,H3F TOSHIBA

获取价格

Small-Signal Schottky Barrier Diodes
1SS405,H3F(B TOSHIBA

获取价格

Rectifier Diode
1SS405,H3F(T TOSHIBA

获取价格

Rectifier Diode
1SS405H3F TOSHIBA

获取价格

Rectifier Diode
1SS406 TOSHIBA

获取价格

High Speed Switching Application
1SS406,H3F(T TOSHIBA

获取价格

0.05A, 25V, SILICON, SIGNAL DIODE
1SS412 TOSHIBA

获取价格

General-Purpose Rectifier Applications
1SS412(TE85L,F) TOSHIBA

获取价格

RECTIFIER DIODES,DOUBLER,85V V(RRM),SC-70
1SS413 SEMTECH

获取价格

SILICON EPITAXIAL SCHOTTKY BARRIER DIODE