5秒后页面跳转
1SS405(TPL3,F) PDF预览

1SS405(TPL3,F)

更新时间: 2024-02-29 08:41:36
品牌 Logo 应用领域
东芝 - TOSHIBA 测试光电二极管
页数 文件大小 规格书
3页 208K
描述
RECTIFIER DIODE,SCHOTTKY,25V V(RRM),EMD2VAR

1SS405(TPL3,F) 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-F2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.66应用:GENERAL PURPOSE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.55 V
JESD-30 代码:R-PDSO-F2最大非重复峰值正向电流:1 A
元件数量:1相数:1
端子数量:2最高工作温度:125 °C
最大输出电流:0.05 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.15 W最大重复峰值反向电压:25 V
最大反向电流:0.5 µA反向测试电压:20 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子形式:FLAT
端子位置:DUALBase Number Matches:1

1SS405(TPL3,F) 数据手册

 浏览型号1SS405(TPL3,F)的Datasheet PDF文件第2页浏览型号1SS405(TPL3,F)的Datasheet PDF文件第3页 
1SS405  
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type  
1SS405  
Unit: mm  
High Speed Switching Application  
z
z
z
Low forward voltage  
Low reverse current  
Small total capacitance  
: V  
= 0.50V (typ.)  
F (3)  
: I = 0.5μA (max)  
R
: C = 3.9pF (typ.)  
T
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Maximum (peak) reverse Voltage  
Reverse voltage  
V
25  
20  
V
V
RM  
V
R
Maximum (peak) forward current  
Average forward current  
Surge current (10ms)  
I
100  
mA  
mA  
A
FM  
I
50  
O
I
1
FSM  
P *  
Power dissipation  
150  
mW  
°C  
°C  
JEDEC  
Junction temperature  
T
125  
j
JEITA  
Storage temperature range  
T
55 to 125  
stg  
TOSHIBA  
1-1G1A  
Weight: 1.4mg(Typ.)  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*:  
Mounted on a glass epoxy circuit board of 20 × 20 mm,  
pad dimension of 4 × 4 mm.  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 1mA  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
0.33  
0.38  
0.50  
F (1)  
F (2)  
F (3)  
F
F
F
Forward voltage  
= 5mA  
= 50mA  
0.55  
0.5  
Reverse current  
I
V
V
= 20V  
R
R
R
μA  
Total capacitance  
C
T
= 0, f = 1MH  
3.9  
z
pF  
Equivalent Circuit (Top View)  
Marking  
A7  
Start of commercial production  
2001-09  
2014-03-01  
1

与1SS405(TPL3,F)相关器件

型号 品牌 描述 获取价格 数据表
1SS405,H3F TOSHIBA Small-Signal Schottky Barrier Diodes

获取价格

1SS405,H3F(B TOSHIBA Rectifier Diode

获取价格

1SS405,H3F(T TOSHIBA Rectifier Diode

获取价格

1SS405H3F TOSHIBA Rectifier Diode

获取价格

1SS406 TOSHIBA High Speed Switching Application

获取价格

1SS406,H3F(T TOSHIBA 0.05A, 25V, SILICON, SIGNAL DIODE

获取价格