5秒后页面跳转
1SS405 PDF预览

1SS405

更新时间: 2024-02-18 21:34:13
品牌 Logo 应用领域
东芝 - TOSHIBA 开关
页数 文件大小 规格书
3页 191K
描述
High Speed Switching Application

1SS405 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-F2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.36
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.55 VJESD-30 代码:R-PDSO-F2
最大非重复峰值正向电流:1 A元件数量:1
相数:1端子数量:2
最高工作温度:125 °C最大输出电流:0.05 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.15 W认证状态:Not Qualified
最大重复峰值反向电压:25 V最大反向电流:0.5 µA
反向测试电压:20 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1SS405 数据手册

 浏览型号1SS405的Datasheet PDF文件第2页浏览型号1SS405的Datasheet PDF文件第3页 
1SS405  
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type  
1SS405  
Unit: mm  
High Speed Switching Application  
z
z
z
Low forward voltage  
Low reverse current  
Small total capacitance  
: V  
= 0.50V (typ.)  
F (3)  
: I = 0.5μA (max)  
R
: C = 3.9pF (typ.)  
T
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Maximum (peak) reverse Voltage  
Reverse voltage  
V
25  
20  
V
V
RM  
V
R
Maximum (peak) forward current  
Average forward current  
Surge current (10ms)  
I
100  
50  
mA  
mA  
A
FM  
I
O
I
1
FSM  
P *  
Power dissipation  
150  
125  
55~125  
mW  
°C  
°C  
Junction temperature  
T
j
JEDEC  
Storage temperature range  
T
stg  
JEITA  
TOSHIBA  
1-1G1A  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
Weight: 1.4mg(Typ.)  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*:  
Mounted on a glass epoxy circuit board of 20 × 20 mm,  
pad dimension of 4 × 4 mm.  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 1mA  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
0.33  
0.38  
0.50  
F (1)  
F (2)  
F (3)  
F
F
F
Forward voltage  
= 5mA  
= 50mA  
0.55  
0.5  
Reverse current  
I
V
V
= 20V  
R
R
R
μA  
Total capacitance  
C
T
= 0, f = 1MH  
3.9  
z
pF  
Equivalent Circuit (Top View)  
Marking  
A7  
2007-11-01  
1

与1SS405相关器件

型号 品牌 描述 获取价格 数据表
1SS405(TL3,F,D) TOSHIBA X34 PB-F ESC SHOTTKY BARRIER DIODE (LF), IFM=300MA

获取价格

1SS405(TPH3) TOSHIBA RECTIFIER DIODE,SCHOTTKY,25V V(RRM),EMD2VAR

获取价格

1SS405(TPL3,F) TOSHIBA RECTIFIER DIODE,SCHOTTKY,25V V(RRM),EMD2VAR

获取价格

1SS405,H3F TOSHIBA Small-Signal Schottky Barrier Diodes

获取价格

1SS405,H3F(B TOSHIBA Rectifier Diode

获取价格

1SS405,H3F(T TOSHIBA Rectifier Diode

获取价格