是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 17 weeks |
风险等级: | 1.06 | 其他特性: | LOW THRESHOLD |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 70 V | 最大漏极电流 (ID): | 3.8 A |
最大漏源导通电阻: | 0.16 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 17.7 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ZXMS6001 | ZETEX |
获取价格 |
60V N-channel self protected enhancement mode INTELLIFETTM MOSFET | |
ZXMS6001N3 | ZETEX |
获取价格 |
60V N-channel self protected enhancement mode INTELLIFETTM MOSFET | |
ZXMS6001N3 | DIODES |
获取价格 |
60V N-channel self protected enhancement mode | |
ZXMS6001N3Q | DIODES |
获取价格 |
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET | |
ZXMS6001N3QTA | DIODES |
获取价格 |
暂无描述 | |
ZXMS6001N3TA | DIODES |
获取价格 |
60V N-channel self protected enhancement mode | |
ZXMS6001N3TA | ZETEX |
获取价格 |
60V N-channel self protected enhancement mode INTELLIFETTM MOSFET | |
ZXMS6002G | DIODES |
获取价格 |
60V N-Channel self protected enhancement mode | |
ZXMS6002G | ZETEX |
获取价格 |
60V N-Channel self protected enhancement mode | |
ZXMS6002GQTA | DIODES |
获取价格 |
Power Field-Effect Transistor, 1.4A I(D), 60V, 0.675ohm, 1-Element, N-Channel, Silicon, Me |