是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 15 weeks |
风险等级: | 5.72 | 其他特性: | HIGH RELIABILITY |
雪崩能效等级(Eas): | 550 mJ | 外壳连接: | DRAIN |
配置: | SINGLE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 1.4 A | 最大漏源导通电阻: | 0.675 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
参考标准: | AEC-Q101 | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ZXMS6002GTA | ZETEX |
获取价格 |
60V N-Channel self protected enhancement mode | |
ZXMS6002GTA | DIODES |
获取价格 |
60V N-Channel self protected enhancement mode | |
ZXMS6003 | ZETEX |
获取价格 |
60V N-channel self protected enhancement mode IntelliFET MOSFET with programmable current | |
ZXMS6003G | ZETEX |
获取价格 |
60V N-channel self protected enhancement mode IntelliFET MOSFET with programmable current | |
ZXMS6003G | DIODES |
获取价格 |
60V N-channel self protected enhancement mode | |
ZXMS6003GQTA | DIODES |
获取价格 |
暂无描述 | |
ZXMS6003GTA | ZETEX |
获取价格 |
60V N-channel self protected enhancement mode IntelliFET MOSFET with programmable current | |
ZXMS6003GTA | DIODES |
获取价格 |
60V N-channel self protected enhancement mode | |
ZXMS6003TA | ZETEX |
获取价格 |
Transistor | |
ZXMS6004DG | DIODES |
获取价格 |
60V N-channel self protected enhancement mode |