ZXMS6003G

更新时间： 2024-10-30 07:42:31

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
10页	776K
描述
60V N-channel self protected enhancement mode

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中文翻译

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数据手册

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ZXMS6003G 数据手册

ZXMS6003G

60V N-channel self protected enhancement mode

IntelliFET^TMMOSFET with programmable current limit

Summary

Continuous drain source voltage

On-state resistance

= 60V

500m⍀

1.4A

Nominal load current (V = 5V)

Clamping energy

550mJ

Description

Self protected low side MOSFET. Monolithic over

temperature, over current, over voltage (active

clamp) and ESD protected logic level functionality.

Intended as a general purpose switch, with status

indication and programmable current limit.

Status

Rprog

Top view

Note: Rprog must be connected between the

Status and IN pins

Features

•

Current limit programmable via external

resistor

•

Over-current protection

Input Protection (ESD)

•

Status pin (analog status indication)

Short circuit protection with auto restart

Over voltage protection (active clamp)

Thermal shutdown with auto restart

Load dump protection (actively protects

load)

•

Logic Level Input

High continuous current rating

Ordering information

Device

Part mark Reel size Tape width Quantity

(inches)

(mm)

per reel

ZXMS6003GTA

ZXMS6003

1,000

Issue 2 - March 2007

www.zetex.com

12 3 4 5 6 7...10

中文翻译

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