ZXMS6004DG

更新时间： 2024-09-13 07:42:31

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
10页	473K
描述
60V N-channel self protected enhancement mode

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中文翻译

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数据手册

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ZXMS6004DG 数据手册

A Product Line of

Diodes Incorporated

ZXMS6004DG

60V N-channel self protected enhancement mode

Intellifet MOSFET

Summary

Continuous drain source voltage

On-state resistance

60 V

500 mΩ

1.3 A

Nominal load current (V = 5V)

Clamping energy

490mJ

Description

The ZXMS6004DG is a self protected low side MOSFET with logic level

input. It integrates over-temperature, over-current, over-voltage (active

clamp) and ESD protected logic level functionality. The ZXMS6004DG is

ideal as

a general purpose switch driven from 3.3V or 5V

microcontrollers in harsh environments where standard MOSFETs are

not rugged enough.

Features

•

Compact high power dissipation package

Low input current

Logic Level Input (3.3V and 5V)

Short circuit protection with auto restart

Over voltage protection (active clamp)

Thermal shutdown with auto restart

Over-current protection

Top view

Input Protection (ESD)

High continuous current rating

Ordering information

Device

Part mark

Reel size

(inches)

Tape width

(mm)

Quantity per reel

3,000 units

ZXMS66004DGTA

ZXMS

6004D

12 embossed

Issue 1 - December 2008

www.zetex.com

www.diodes.com

12 3 4 5 6 7...10

中文翻译

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与ZXMS6004DG相关器件

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ZXMS6004DGQ	DIODES	获取价格	60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET
ZXMS6004DGQ-13	DIODES	获取价格	60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET
ZXMS6004DGQTA	DIODES	获取价格	Power Field-Effect Transistor,
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ZXMS6004DN8-13	DIODES	获取价格	Power Field-Effect Transistor, 60V, 0.6ohm, 2-Element, N-Channel, Silicon, Metal-oxide Sem
ZXMS6004DN8Q	DIODES	获取价格	60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET
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