是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SOT-223 |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | 针数: | 4 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 17 weeks | 风险等级: | 1.61 |
Samacsys Description: | Diodes Inc ZXMS6005DGTA N-channel MOSFET Transistor, 2 A, 70 V, 4-Pin SOT-223 | 其他特性: | LOGIC LEVEL COMPATIBLE |
雪崩能效等级(Eas): | 490 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏源导通电阻: | 0.25 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 3 W | 最大脉冲漏极电流 (IDM): | 6 A |
子类别: | FET General Purpose Powers | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ZXMS6005DN8 | DIODES |
获取价格 |
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET | |
ZXMS6005DN8Q | DIODES |
获取价格 |
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET | |
ZXMS6005DT8 | DIODES |
获取价格 |
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE | |
ZXMS6005DT8Q | DIODES |
获取价格 |
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET? MOSFET | |
ZXMS6005DT8QTA | DIODES |
获取价格 |
Small Signal Field-Effect Transistor | |
ZXMS6005DT8TA | DIODES |
获取价格 |
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE | |
ZXMS6005N8 | DIODES |
获取价格 |
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET | |
ZXMS6005N8-13 | DIODES |
获取价格 |
Power Field-Effect Transistor, | |
ZXMS6005N8Q | DIODES |
获取价格 |
60V N-CHANNEL SELF-PROTECTED ENHANCEMENT MODE LOW-SIDE IntelliFET | |
ZXMS6005SG | DIODES |
获取价格 |
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE |