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ZXMS6005DT8QTA PDF预览

ZXMS6005DT8QTA

更新时间: 2024-02-04 15:01:36
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
9页 246K
描述
Small Signal Field-Effect Transistor

ZXMS6005DT8QTA 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:17 weeks
风险等级:2.17Samacsys Confidence:3
Samacsys Status:Released2D Presentation:https://componentsearchengine.com/2D/0T/1351032.2.1.png
Schematic Symbol:https://componentsearchengine.com/symbol.php?partID=1351032PCB Footprint:https://componentsearchengine.com/footprint.php?partID=1351032
3D View:https://componentsearchengine.com/viewer/3D.php?partID=1351032Samacsys PartID:1351032
Samacsys Image:https://componentsearchengine.com/Images/9/ZXMS6005DT8TA.jpgSamacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/2/ZXMS6005DT8TA.jpg
Samacsys Pin Count:8Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Small Outline PackagesSamacsys Footprint Name:ZXMS6005DT8TA
Samacsys Released Date:2019-03-05 11:05:25Is Samacsys:N
配置:SEPARATE, 2 ELEMENTS最小漏源击穿电压:60 V
最大漏极电流 (ID):0.0014 A最大漏源导通电阻:0.25 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2.13 W
子类别:FET General Purpose Powers表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

ZXMS6005DT8QTA 数据手册

 浏览型号ZXMS6005DT8QTA的Datasheet PDF文件第2页浏览型号ZXMS6005DT8QTA的Datasheet PDF文件第3页浏览型号ZXMS6005DT8QTA的Datasheet PDF文件第4页浏览型号ZXMS6005DT8QTA的Datasheet PDF文件第5页浏览型号ZXMS6005DT8QTA的Datasheet PDF文件第6页浏览型号ZXMS6005DT8QTA的Datasheet PDF文件第7页 
A Product Line of  
Diodes Incorporated  
ZXMS6005DT8  
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE  
INTELLIFETMOSFET  
SUMMARY  
Continuous drain source voltage 60 V  
On-state resistance  
200 mΩ  
Nominal load current (VIN = 5V) 1.8 A  
Clamping Energy  
DESCRIPTION  
210 mJ  
SM8 Package  
The ZXMS6005DT8 is a dual self protected low side MOSFET  
with logic level input. It integrates over-temperature, over-  
current, over-voltage (active clamp) and ESD protected logic level  
functionality independently per channel. The ZXMS6005DT8 is  
ideal as a general purpose switch driven from 3.3V or 5V  
microcontrollers in harsh environments where standard  
MOSFETs are not rugged enough.  
FEATURES  
Compact dual package  
Low input current  
Logic Level Input (3.3V and 5V)  
Short circuit protection with auto restart  
Over voltage protection (active clamp)  
Thermal shutdown with auto restart  
Over-current protection  
Input Protection (ESD)  
High continuous current rating  
ORDERING INFORMATION  
DEVICE  
PART  
MARK  
REEL SIZE  
(inches)  
TAPE WIDTH  
(mm)  
QUANTITY PER  
REEL  
ZXMS6005DT8TA  
ZXMS  
6005D  
7
12 embossed  
1,000 units  
1 of 9  
www.diodes.com  
June 2010  
© Diodes Incorporated  
ZXMS6005DT8  
Document Number DS32248 Rev. 1 - 2  

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