5秒后页面跳转
ZXMS6006DGTA PDF预览

ZXMS6006DGTA

更新时间: 2024-01-25 00:45:58
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
9页 240K
描述
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET

ZXMS6006DGTA 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-261AA
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:2.19其他特性:HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏源导通电阻:0.125 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-261AA
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.6 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

ZXMS6006DGTA 数据手册

 浏览型号ZXMS6006DGTA的Datasheet PDF文件第2页浏览型号ZXMS6006DGTA的Datasheet PDF文件第3页浏览型号ZXMS6006DGTA的Datasheet PDF文件第4页浏览型号ZXMS6006DGTA的Datasheet PDF文件第5页浏览型号ZXMS6006DGTA的Datasheet PDF文件第6页浏览型号ZXMS6006DGTA的Datasheet PDF文件第7页 
A Product Line of  
Diodes Incorporated  
ZXMS6006DG  
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE  
INTELLIFET ® MOSFET  
Product Summary  
Features and Benefits  
Continuos drain source voltage  
On-state resistance  
60V  
Compact high power dissipation package  
Low input current  
100mΩ  
2.8A  
Logic Level Input (3.3V and 5V)  
Short circuit protection with auto restart  
Over voltage protection (active clamp)  
Thermal shutdown with auto restart  
Over-current protection  
Input Protection (ESD)  
High continuous current rating  
Green, RoHS Compliant (Note 1)  
Halogen and Antimony Free. (Note 2)  
Qualified to AEC-Q101 Standards for High Reliability  
Nominal load current (VIN = 5V)  
Clamping Energy  
490mJ  
Description and Applications  
The ZXMS6006DG is a self protected low side MOSFET with logic  
level input. It integrates over-temperature, over-current, over-voltage  
(active clamp) and ESD protected logic level functionality. The  
ZXMS6006DG is ideal as a general purpose switch driven from 3.3V  
or 5V microcontrollers in harsh environments where standard  
MOSFETs are not rugged enough.  
Mechanical Data  
Lamp Driver  
Motor Driver  
Relay Driver  
Solenoid Driver  
Case: SOT-223  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Matte Tin Finish  
Weight: 0.112 grams (approximate)  
SOT-223  
D
S
IN  
D
D
IN  
S
Device symbol  
Top View  
Top view  
Pin Out  
Ordering Information (Note 3)  
Product  
ZXMS6006DGTA  
Marking  
ZXMS6006D  
Reel size (inches)  
Tape width (mm)  
Quantity per reel  
1,000  
7
12  
Notes:  
1. Contain <900ppm bromine, chlorine (<1500ppm total) and <1000ppm antimony compounds.  
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com  
3. For packaging details, go to our website at http://www.diodes.com  
Marking Information  
ZXMS  
6006D  
ZXMS6006D = Product type Marking Code  
IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.  
1 of 9  
www.diodes.com  
December 2010  
© Diodes Incorporated  
ZXMS6006DG  
Document number: DS35142 Rev. 1 - 2  

与ZXMS6006DGTA相关器件

型号 品牌 描述 获取价格 数据表
ZXMS6006DT8 DIODES 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE

获取价格

ZXMS6006DT8Q DIODES 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET

获取价格

ZXMS6006DT8TA DIODES 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE

获取价格

ZXMS6006SG DIODES 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE

获取价格

ZXMS6006SGQ DIODES 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET

获取价格

ZXMS6006SGTA DIODES 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE

获取价格