Datasheet > ZXMS6006DG

ZXMS6006DG

更新时间： 2024-11-19 07:42:31

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
9页	240K
描述
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ZXMS6006DG 数据手册

A Product Line of

Diodes Incorporated

ZXMS6006DG

60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE

INTELLIFET ^®MOSFET

Product Summary

Features and Benefits

•

Continuos drain source voltage

On-state resistance

60V

•

Compact high power dissipation package

Low input current

100mΩ

2.8A

Logic Level Input (3.3V and 5V)

Short circuit protection with auto restart

Over voltage protection (active clamp)

Thermal shutdown with auto restart

Over-current protection

Input Protection (ESD)

High continuous current rating

Green, RoHS Compliant (Note 1)

Halogen and Antimony Free. (Note 2)

Qualified to AEC-Q101 Standards for High Reliability

Nominal load current (V_IN= 5V)

Clamping Energy

490mJ

Description and Applications

The ZXMS6006DG is a self protected low side MOSFET with logic

level input. It integrates over-temperature, over-current, over-voltage

(active clamp) and ESD protected logic level functionality. The

ZXMS6006DG is ideal as a general purpose switch driven from 3.3V

or 5V microcontrollers in harsh environments where standard

MOSFETs are not rugged enough.

Mechanical Data

•

Lamp Driver

Motor Driver

Relay Driver

Solenoid Driver

•

Case: SOT-223

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish

Weight: 0.112 grams (approximate)

SOT-223

Device symbol

Top View

Top view

Pin Out

Ordering Information (Note 3)

Product

ZXMS6006DGTA

Marking

ZXMS6006D

Reel size (inches)

Tape width (mm)

Quantity per reel

1,000

Notes:

1. Contain <900ppm bromine, chlorine (<1500ppm total) and <1000ppm antimony compounds.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

ZXMS

6006D

ZXMS6006D = Product type Marking Code

IntelliFET^®is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.

1 of 9

www.diodes.com

December 2010

ZXMS6006DG

Document number: DS35142 Rev. 1 - 2

12 3 4 5 6 7...9

中文翻译

下载PDF

与ZXMS6006DG相关器件

型号	品牌	获取价格	描述	数据表
ZXMS6006DGQ	DIODES	获取价格	60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET
ZXMS6006DGQ-13	DIODES	获取价格	60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET
ZXMS6006DGTA	DIODES	获取价格	60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET
ZXMS6006DT8	DIODES	获取价格	60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
ZXMS6006DT8Q	DIODES	获取价格	60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET
ZXMS6006DT8TA	DIODES	获取价格	60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
ZXMS6006SG	DIODES	获取价格	60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
ZXMS6006SGQ	DIODES	获取价格	60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET
ZXMS6006SGTA	DIODES	获取价格	60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
ZXMS6008FF	DIODES	获取价格	60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET

与ZXMS6006DG相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

23
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

15
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

45
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

45

产品中心

服务支持

精选活动

关于我们

帮助中心

ZXMS6006DG

ZXMS6006DG 数据手册

与ZXMS6006DG相关器件

与ZXMS6006DG相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

ZXMS6006DG

ZXMS6006DG 数据手册

与ZXMS6006DG相关器件

与ZXMS6006DG相关文章

您还可以找

您在本页遇到什么问题？