ZXMS6005SG

更新时间： 2024-11-19 05:54:51

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
9页	555K
描述
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET™ MOSFET

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中文翻译

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数据手册

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ZXMS6005SG 数据手册

A Product Line of

Diodes Incorporated

ZXMS6005SG

60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE

INTELLIFET™ MOSFET

SUMMARY

Continuous drain source voltage 60 V

On-state resistance

200 mΩ

Nominal load current (V_IN= 5V) 2 A

SOT223 Package

Clamping Energy

DESCRIPTION

480 mJ

The ZXMS6005SG is a self protected low side MOSFET with logic

level input. It integrates over-temperature, over-current, over-voltage

(active clamp) and ESD protected logic level functionality. The

ZXMS6005SG is ideal as a general purpose switch driven from 3.3V

or 5V microcontrollers in harsh environments where standard

MOSFETs are not rugged enough.

FEATURES

•

Compact high power dissipation package

Low input current

Logic Level Input (3.3V and 5V)

Short circuit protection with auto restart

Over voltage protection (active clamp)

Thermal shutdown with auto restart

Over-current protection

Input Protection (ESD)

High continuous current rating

ORDERING INFORMATION

DEVICE

PART

MARK

REEL SIZE

(inches)

TAPE WIDTH

(mm)

QUANTITY PER

REEL

ZXMS6005SGTA

ZXMS

6005S

12 embossed

1,000 units

1 of 9

www.diodes.com

June 2010

ZXMS6005SG

Document Number DS32249 Rev. 1 - 2

12 3 4 5 6 7...9

中文翻译

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