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ZXMS6005DT8

更新时间： 2024-11-23 05:54:43

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
9页	246K
描述
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET™ MOSFET

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中文翻译

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数据手册

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ZXMS6005DT8 数据手册

A Product Line of

Diodes Incorporated

ZXMS6005DT8

60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE

INTELLIFET™ MOSFET

SUMMARY

Continuous drain source voltage 60 V

On-state resistance

200 mΩ

Nominal load current (V_IN= 5V) 1.8 A

Clamping Energy

DESCRIPTION

210 mJ

SM8 Package

The ZXMS6005DT8 is a dual self protected low side MOSFET

with logic level input. It integrates over-temperature, over-

current, over-voltage (active clamp) and ESD protected logic level

functionality independently per channel. The ZXMS6005DT8 is

ideal as a general purpose switch driven from 3.3V or 5V

microcontrollers in harsh environments where standard

MOSFETs are not rugged enough.

FEATURES

•

Compact dual package

Low input current

Logic Level Input (3.3V and 5V)

Short circuit protection with auto restart

Over voltage protection (active clamp)

Thermal shutdown with auto restart

Over-current protection

Input Protection (ESD)

High continuous current rating

ORDERING INFORMATION

DEVICE

PART

MARK

REEL SIZE

(inches)

TAPE WIDTH

(mm)

QUANTITY PER

REEL

ZXMS6005DT8TA

ZXMS

6005D

12 embossed

1,000 units

1 of 9

www.diodes.com

June 2010

ZXMS6005DT8

Document Number DS32248 Rev. 1 - 2

12 3 4 5 6 7...9

中文翻译

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