是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 15 weeks | 风险等级: | 5.74 |
其他特性: | HIGH RELIABILITY | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏源导通电阻: | 0.6 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e3 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 参考标准: | AEC-Q101 |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ZXMS6004DT8TA | DIODES |
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60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE | |
ZXMS6004FF | DIODES |
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60V N-channel self protected enhancement mode Intellifet MOSFET | |
ZXMS6004FF | KEXIN |
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N-Channel MOSFET | |
ZXMS6004FF-7 | DIODES |
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60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET | |
ZXMS6004FFQ | DIODES |
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60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET TM MOSFET | |
ZXMS6004FFQ-7 | DIODES |
获取价格 |
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET | |
ZXMS6004FFQTA | DIODES |
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Small Signal Field-Effect Transistor, | |
ZXMS6004FFTA | DIODES |
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60V N-channel self protected enhancement mode Intellifet MOSFET | |
ZXMS6004N8 | DIODES |
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60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET | |
ZXMS6004N8-13 | DIODES |
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Power Field-Effect Transistor, |