Datasheet > ZXMS6004FF

ZXMS6004FF

更新时间： 2024-10-15 18:09:23

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	504K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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ZXMS6004FF 数据手册

SMD Type

MOSFET

Transistors

N-Channel Self Protected

Enhancement Mode MOSFET

ZXMS6004FF(KXMS6004FF)

SOT-23

ƵꢀFeatures

Unit: mm

+0.1

-0.1

2.9

0.4

ƽ Compact high power dissipation package

+0.1

-0.1

ƽ Low input current

ƽ Logic Level Input (3.3V and 5V)

ꢀƽ Short circuit protection with auto restart

ꢀƽ Over voltage protection (active clamp)

ꢀƽ Thermal shutdown with auto restart

ƽ Over-current protection

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

ꢀƽ Input Protection (ESD)

1. IN

ƽ High continuous current rating

2. Source

3. Drain

Ƶ Absolute Maximum Ratings Ta = 25ć

Parameter

Drain-Source Voltage

Symbol

Rating

Unit

DS(SC)

Drain-Source voltage for short circuit protection

Continuous input Voltage

-0.5 … +6

Continuous input Current

-0.2VİV_INİ6V

No limit

|I_IN|İ2

V_IN<-0.2V or V_IN>6V

Pulsed Drain Current @ V_IN=3.3V

IDM

Pulsed Drain Current @ V_IN=5V

2.5

Power Dissipation at TA = 25ć ^(a)

0.83

6.66

1.5

Linear derating factor

Power Dissipation at TA = 25ć ^(b)

mW/ć

Linear derating factor

mW/ć

(a)

I_S

Continuous source current (Body Diode)

I_SM

Pulsed dource current (Body Diode)

Unclamped single pulse inductive energy,

T_j=25ć, I_D=0.5A, V_DD=24V

E_AS

V_ESD

V_CDM

Electrostatic discharge (Human body model)

Charged device model

Thermal Resistance.Junction- to-Ambient ^(a)

Thermal Resistance.Junction- to-Ambient ^(b)

4000

1000

150

RthJA

RthJC

ć/W

(c)

Thermal Resistance.Junction- to-Case

Junction Temperature

Storage Temperature Range

Note:

150

Tstg

-55 to 150

(a) For a device surface mounted on a 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board,in still air

conditions.

(b)For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board,in still air

conditions.

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中文翻译

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