Datasheet > ZXMS6004DN8

ZXMS6004DN8

更新时间： 2024-11-24 14:53:35

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
9页	413K
描述
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET

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中文翻译

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ZXMS6004DN8 数据手册

ZXMS6004DN8

60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE

INTELLIFET^®MOSFET

Product Summary

Features and Benefits



Continuos Drain-Source Voltage: 60V

On-State Resistance: 500mΩ



Low Input Current

Logic Level Input (3.3V and 5V)

Nominal Load Current (V_IN= 5V): 1.3A

Clamping Energy: 120mJ

Short Circuit Protection with Auto Restart

Overvoltage Protection (Active Clamp)

Thermal Shutdown with Auto Restart

Overcurrent Protection

Description

Input Protection (ESD)

The ZXMS6004DN8 is a dual self-protected low side MOSFET with

logic level input. It integrates over-temperature, overcurrent,

overvoltage (active clamp) and ESD protected logic level functionality.

The ZXMS6004DN8 is ideal as a general purpose switch driven from

3.3V or 5V microcontrollers in harsh environments where standard

MOSFETs are not rugged enough.

High Continuous Current Rating

Totally Lead-Free; RoHS compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Mechanical Data

Applications



Case: SO-8



Lamp Driver

Motor Driver

Relay Driver

Solenoid Driver

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish



Weight: 79.1 mg (Approximate)

SO-8

IN1

IN2

Top View

Pin-Out

Device Symbol

Top View

Ordering Information (Note 4)

Product

ZXMS6004DN8-13

Marking

6004DN8

Reel size (inches)

Tape width (mm)

Quantity per reel

2,500 units

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

6004DN8 = Product name

Logo

Part No.

YY: Year

WW: Week: 01~52;

52 represents 52 and 53 week

6004DN8

YY WW

Pin 1.

Top View

IntelliFET is a registered trademark of Diodes Incorporated.

1 of 9

www.diodes.com

August 2015

ZXMS6004DN8

Document number: DS38040 Rev. 2 - 2

12 3 4 5 6 7...9

中文翻译

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与ZXMS6004DN8相关器件

型号	品牌	获取价格	描述	数据表
ZXMS6004DN8-13	DIODES	获取价格	Power Field-Effect Transistor, 60V, 0.6ohm, 2-Element, N-Channel, Silicon, Metal-oxide Sem
ZXMS6004DN8Q	DIODES	获取价格	60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET
ZXMS6004DT8	DIODES	获取价格	60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
ZXMS6004DT8Q	DIODES	获取价格	60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET? MOSFET
ZXMS6004DT8QTA	DIODES	获取价格	Small Signal Field-Effect Transistor,
ZXMS6004DT8TA	DIODES	获取价格	60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
ZXMS6004FF	DIODES	获取价格	60V N-channel self protected enhancement mode Intellifet MOSFET
ZXMS6004FF	KEXIN	获取价格	N-Channel MOSFET
ZXMS6004FF-7	DIODES	获取价格	60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET
ZXMS6004FFQ	DIODES	获取价格	60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET TM MOSFET

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