Datasheet > ZXMS6004DN8Q

ZXMS6004DN8Q

更新时间： 2024-11-24 14:55:23

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
9页	589K
描述
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET

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中文翻译

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ZXMS6004DN8Q 数据手册

ZXMS6004DN8Q

60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE

INTELLIFET MOSFET

Product Summary

Features and Benefits



Low Input Current

I_D

V_DS

R_DS(ON)

E_AS

T_A= +25°C

Logic Level Input (3.3V and 5V)

Short Circuit Protection with Auto Restart

Overvoltage Protection (Active Clamp)

Thermal Shutdown with Auto Restart

Overcurrent Protection

60V

500mΩ

120mJ

1.3A

Input Protection (ESD)

High Continuous Current Rating

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Characterized to AEC-Q101-006 Grade F for Short-Circuit

Reliability

Description

The ZXMS6004DN8Q is a dual self-protected low-side IntelliFET^®

MOSFET with logic level input. It integrates overtemperature,

overcurrent, overvoltage (active clamp) and ESD protected logic level

functionality. The ZXMS6004DN8Q is ideal as a general purpose

switch driven from 3.3V or 5V microcontrollers in harsh environments

where standard MOSFETs are not rugged enough.



PPAP Capable (Note 4)

Mechanical Data

Applications



Case: SO-8



Lamp Driver

Motor Driver

Relay Driver

Solenoid Driver

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish



Weight: 79.1mg (Approximate)

SO-8

IN1

IN2

Ordering Information (Note 5)

Product

Marking

Reel Size (inches)

Tape Width (mm)

Quantity per Reel

ZXMS6004DN8Q-13

6004DN8

2,500 Units

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q10x qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

6004DN8 = Product Name

YY: Year

WW: Week: 01~52;

52 represents 52 and 53 week

Logo

Part No.

6004DN8

YY WW

Pin 1.

IntelliFET is a registered trademark of Diodes Incorporated.

1 of 9

www.diodes.com

June 2016

ZXMS6004DN8Q

Document number: DS38898 Rev. 1 - 2

12 3 4 5 6 7...9

中文翻译

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与ZXMS6004DN8Q相关器件

型号	品牌	获取价格	描述	数据表
ZXMS6004DT8	DIODES	获取价格	60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
ZXMS6004DT8Q	DIODES	获取价格	60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET? MOSFET
ZXMS6004DT8QTA	DIODES	获取价格	Small Signal Field-Effect Transistor,
ZXMS6004DT8TA	DIODES	获取价格	60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
ZXMS6004FF	DIODES	获取价格	60V N-channel self protected enhancement mode Intellifet MOSFET
ZXMS6004FF	KEXIN	获取价格	N-Channel MOSFET
ZXMS6004FF-7	DIODES	获取价格	60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET
ZXMS6004FFQ	DIODES	获取价格	60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET TM MOSFET
ZXMS6004FFQ-7	DIODES	获取价格	60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET
ZXMS6004FFQTA	DIODES	获取价格	Small Signal Field-Effect Transistor,

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