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ZXMS6004DGTA PDF预览

ZXMS6004DGTA

更新时间: 2024-11-19 18:52:55
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
10页 461K
描述
MOSFETs INTELLIFET MOSFET 60V N CHAN

ZXMS6004DGTA 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliantFactory Lead Time:17 weeks
风险等级:1.68JESD-609代码:e3
湿度敏感等级:1峰值回流温度(摄氏度):260
端子面层:Matte Tin (Sn)处于峰值回流温度下的最长时间:30
Base Number Matches:1

ZXMS6004DGTA 数据手册

 浏览型号ZXMS6004DGTA的Datasheet PDF文件第2页浏览型号ZXMS6004DGTA的Datasheet PDF文件第3页浏览型号ZXMS6004DGTA的Datasheet PDF文件第4页浏览型号ZXMS6004DGTA的Datasheet PDF文件第5页浏览型号ZXMS6004DGTA的Datasheet PDF文件第6页浏览型号ZXMS6004DGTA的Datasheet PDF文件第7页 
A Product Line of  
Diodes Incorporated  
ZXMS6004DG  
60V N-channel self protected enhancement mode  
Intellifet MOSFET  
Summary  
Continuous drain source voltage  
On-state resistance  
60 V  
500 mΩ  
1.3 A  
Nominal load current (V = 5V)  
IN  
Clamping energy  
490mJ  
Description  
The ZXMS6004DG is a self protected low side MOSFET with logic level  
input. It integrates over-temperature, over-current, over-voltage (active  
clamp) and ESD protected logic level functionality. The ZXMS6004DG is  
ideal as  
a general purpose switch driven from 3.3V or 5V  
microcontrollers in harsh environments where standard MOSFETs are  
not rugged enough.  
Features  
Compact high power dissipation package  
Low input current  
Logic Level Input (3.3V and 5V)  
Short circuit protection with auto restart  
Over voltage protection (active clamp)  
Thermal shutdown with auto restart  
Over-current protection  
S
D
D
IN  
Top view  
Input Protection (ESD)  
High continuous current rating  
Ordering information  
Device  
Part mark  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity per reel  
3,000 units  
ZXMS66004DGTA  
ZXMS  
6004D  
7
12 embossed  
Issue 1 - December 2008  
© Diodes Incorporated, 2008  
1
www.zetex.com  
www.diodes.com  

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