是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | not_compliant | Factory Lead Time: | 17 weeks |
风险等级: | 1.68 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 峰值回流温度(摄氏度): | 260 |
端子面层: | Matte Tin (Sn) | 处于峰值回流温度下的最长时间: | 30 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ZXMS6004DN8 | DIODES |
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60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET | |
ZXMS6004DN8-13 | DIODES |
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Power Field-Effect Transistor, 60V, 0.6ohm, 2-Element, N-Channel, Silicon, Metal-oxide Sem | |
ZXMS6004DN8Q | DIODES |
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60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET | |
ZXMS6004DT8 | DIODES |
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60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE | |
ZXMS6004DT8Q | DIODES |
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60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET? MOSFET | |
ZXMS6004DT8QTA | DIODES |
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Small Signal Field-Effect Transistor, | |
ZXMS6004DT8TA | DIODES |
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60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE | |
ZXMS6004FF | DIODES |
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60V N-channel self protected enhancement mode Intellifet MOSFET | |
ZXMS6004FF | KEXIN |
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N-Channel MOSFET | |
ZXMS6004FF-7 | DIODES |
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60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET |