是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-261AA |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | 针数: | 4 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | Factory Lead Time: | 17 weeks |
风险等级: | 1.67 | 雪崩能效等级(Eas): | 550 mJ |
外壳连接: | DRAIN | 配置: | SINGLE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (Abs) (ID): | 1.6 A |
最大漏极电流 (ID): | 1.6 A | 最大漏源导通电阻: | 0.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-261AA |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2.5 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ZXMS6003TA | ZETEX |
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Transistor | |
ZXMS6004DG | DIODES |
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60V N-channel self protected enhancement mode | |
ZXMS6004DGQ | DIODES |
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60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET | |
ZXMS6004DGQ-13 | DIODES |
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60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET | |
ZXMS6004DGQTA | DIODES |
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Power Field-Effect Transistor, | |
ZXMS6004DGTA | DIODES |
获取价格 |
MOSFETs INTELLIFET MOSFET 60V N CHAN | |
ZXMS6004DN8 | DIODES |
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60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET | |
ZXMS6004DN8-13 | DIODES |
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Power Field-Effect Transistor, 60V, 0.6ohm, 2-Element, N-Channel, Silicon, Metal-oxide Sem | |
ZXMS6004DN8Q | DIODES |
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60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET | |
ZXMS6004DT8 | DIODES |
获取价格 |
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE |