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ZXMS6002G PDF预览

ZXMS6002G

更新时间: 2024-11-23 07:42:31
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
10页 655K
描述
60V N-Channel self protected enhancement mode

ZXMS6002G 数据手册

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ZXMS6002G  
60V N-Channel self protected enhancement mode  
IntelliFET™ MOSFET with status indication  
Summary  
Continuous drain source voltage  
On-state resistance  
V
= 60V  
DS  
500m  
1.4A  
Nominal load current (V = 5V)  
IN  
Clamping energy  
550mJ  
Description  
Self protected low side MOSFET. Monolithic  
over temperature, over current, over voltage  
(active clamp) and ESD protected logic level  
functionality. Intended as a general purpose  
switch, with status indication.  
Features  
S
Status pin (analog status indication)  
Short circuit protection with auto restart  
Over voltage protection (active clamp)  
Thermal shutdown with auto restart  
Over-current protection  
Status  
IN  
D
Top view  
Input protection (ESD)  
Load dump protection (actively protects  
load)  
Note: The tab is connected to the drain pin and  
must be electrically isolated from the source  
pin. Connection of significant copper to the tab  
is recommended for best thermal performance.  
Logic level input  
High continuous current rating  
Ordering information  
Device  
Part mark  
ZXMS6002  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity  
per reel  
ZXMS6002GTA  
7
12 embossed  
1000  
Issue 3 - June 2007  
© Zetex Semiconductors plc 2007  
1
www.zetex.com  

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