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ZXMS6001N3 PDF预览

ZXMS6001N3

更新时间: 2024-11-23 07:42:31
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
10页 193K
描述
60V N-channel self protected enhancement mode

ZXMS6001N3 数据手册

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ZXMS6001N3  
60V N-channel self protected enhancement mode  
INTELLIFETTM MOSFET  
Summary  
Continuous drain source voltage V = 60V  
DS  
On-state resistance  
675mΩ  
1.1A (V = 5V)  
Max nominal load current (a)  
Min nominal load current (c)  
Clamping Energy  
IN  
0.7A (V = 5V)  
IN  
550mJ  
Description  
Low input current self protected low side MOSFET intended for Vin=5V  
applications. Monolithic over temperature, over current, over voltage  
(active clamp) and ESD protected logic level functionality. Intended as  
a general purpose switch.  
Note:  
S
The tab is connected to the source pin and must be electrically isolated  
from the drain pin. Connection of significant copper to the drain pin is  
recommended for best thermal performance.  
S
D
Features  
IN  
Short circuit protection with auto restart  
Over voltage protection (active clamp)  
Thermal shutdown with auto restart  
Over-current protection  
SOT223  
Input protection (ESD)  
Load dump protection (actively protects load)  
Low input current  
Ordering information  
Device  
Package  
Part mark  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity  
per reel  
ZXMS6001N3TA  
SOT223  
ZXMS6001  
7
12 embossed  
1,000  
Issue 1 - January 2008  
© Zetex Semiconductors plc 2008  
1
www.zetex.com  

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