ZXMS6001N3

更新时间： 2024-10-14 05:54:43

品牌	Logo	应用领域
捷特科 - ZETEX		/
页数	文件大小	规格书
10页	207K
描述
60V N-channel self protected enhancement mode INTELLIFETTM MOSFET

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中文翻译

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数据手册

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ZXMS6001N3 数据手册

ZXMS6001N3

60V N-channel self protected enhancement mode

INTELLIFET^TMMOSFET

Summary

Continuous drain source voltage V = 60V

On-state resistance

675mΩ

1.1A (V = 5V)

Max nominal load current (a)

Min nominal load current (c)

Clamping Energy

0.7A (V = 5V)

550mJ

Description

Low input current self protected low side MOSFET intended for Vin=5V

applications. Monolithic over temperature, over current, over voltage

(active clamp) and ESD protected logic level functionality. Intended as

a general purpose switch.

Note:

The tab is connected to the source pin and must be electrically isolated

from the drain pin. Connection of significant copper to the drain pin is

recommended for best thermal performance.

Features

•

Short circuit protection with auto restart

Over voltage protection (active clamp)

Thermal shutdown with auto restart

Over-current protection

SOT223

Input protection (ESD)

Load dump protection (actively protects load)

Low input current

Ordering information

Device

Package

Part mark

Reel size

(inches)

Tape width

(mm)

Quantity

per reel

ZXMS6001N3TA

SOT223

ZXMS6001

12 embossed

1,000

Issue 1 - January 2008

www.zetex.com

12 3 4 5 6 7...10

中文翻译

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与ZXMS6001N3相关器件

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ZXMS6001N3QTA	DIODES	获取价格	暂无描述
ZXMS6001N3TA	DIODES	获取价格	60V N-channel self protected enhancement mode
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